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A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
Publication:
A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
Date
2013
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Amat, Esteve
;
Kauerauf, Thomas
;
Rodríguez, Rosana
;
Nafría, Montse
;
Aymerich, Xavier
;
Degraeve, Robin
;
Groeseneken, Guido
Journal
Microelectronic Engineering
Abstract
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Views
1949
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations
Metrics
Views
1949
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations