Publication:

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Date

2013
Journal article
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dc.contributor.authorAmat, Esteve
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRodríguez, Rosana
dc.contributor.authorNafría, Montse
dc.contributor.authorAymerich, Xavier
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-21T06:42:35Z
dc.date.available2021-10-21T06:42:35Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21975
dc.source.beginpage144
dc.source.endpage149
dc.source.journalMicroelectronic Engineering
dc.source.volume103
dc.title

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

dc.typeJournal article
dspace.entity.typePublication
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