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Fabrication of virtual Ge and Ge-rich SiGe substrates using selective or non-selective epitaxial growth

Date

2009
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dc.contributor.authorLoo, Roger
dc.contributor.authorWang, Gang
dc.contributor.authorSouriau, Laurent
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.date.accessioned2021-10-18T00:10:52Z
dc.date.available2021-10-18T00:10:52Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15743
dc.source.conferenceEMRS Spring Meeting: Symp I: Silicon and Germanium issues for future CMOS devices / Nanosil Visionary Workshop
dc.source.conferencedate8/06/2009
dc.source.conferencelocationStrassbourg France
dc.title

Fabrication of virtual Ge and Ge-rich SiGe substrates using selective or non-selective epitaxial growth

dc.typeOral presentation
dspace.entity.typePublication
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