Publication:

First demonstration of 15nm-WFIN inversion-mode relaxed germanium bulk nFinFET with Si-cap free RMG and NiSiGe source/drain

Date

2014
Proceedings Paper
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dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorMilenin, Alexey
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorEneman, Geert
dc.contributor.authorLagrain, Pieter
dc.contributor.authorMertens, Hans
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVrancken, Christa
dc.contributor.authorBender, Hugo
dc.contributor.authorBarla, Kathy
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorLagrain, Pieter
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLagrain, Pieter::0000-0003-3734-7203
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T03:53:33Z
dc.date.available2021-10-22T03:53:33Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24265
dc.source.beginpage418
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2014
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage421
dc.title

First demonstration of 15nm-WFIN inversion-mode relaxed germanium bulk nFinFET with Si-cap free RMG and NiSiGe source/drain

dc.typeProceedings paper
dspace.entity.typePublication
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