Publication:
Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
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1885 since deposited on 2021-10-22
3last month
Acq. date: 2025-12-10
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Metrics
Views
1885 since deposited on 2021-10-22
3last month
Acq. date: 2025-12-10
Citations