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Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

Date

2014
Proceedings Paper
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dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorRoelofs, Robin
dc.contributor.authorWu, Tian-Li
dc.contributor.authorHu, Jie
dc.contributor.authorKang, Xuanwu
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-22T05:15:29Z
dc.date.available2021-10-22T05:15:29Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24452
dc.source.conferenceInternational Solid State Devices and Materials Conference - SSDM
dc.source.conferencedate8/09/2014
dc.source.conferencelocationTsukuba Japan
dc.title

Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

dc.typeProceedings paper
dspace.entity.typePublication
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