Publication:

Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

Date

2012
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorGupta, S.
dc.contributor.authorYang, B.
dc.contributor.authorBury, Erik
dc.contributor.authorSioncke, Sonja
dc.contributor.authorDegraeve, Robin
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKrom, Raymond
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorSaraswat, K.C.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-20T12:48:30Z
dc.date.available2021-10-20T12:48:30Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21032
dc.source.beginpage28.3
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
25230.pdf
Size:
997.06 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions