Publication:

BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors

Date

2017
Proceedings Paper
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dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorWeckx, Pieter
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorMertens, Hans
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.authorRzepa, Gerhard
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-24T15:27:32Z
dc.date.available2021-10-24T15:27:32Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29618
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7936422/
dc.source.beginpage5C-4.1
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.source.endpage5C-4.7
dc.title

BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors

dc.typeProceedings paper
dspace.entity.typePublication
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