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Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions
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Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Czerwinski, A.
;
Simoen, Eddy
;
Poyai, Amporn
;
Claeys, Cor
;
Ohyama, H.
Journal
IEEE Trans. Nuclear Science
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2004
since deposited on 2021-10-15
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Acq. date: 2025-12-15
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Views
2004
since deposited on 2021-10-15
1
last month
1
last week
Acq. date: 2025-12-15
Citations