Publication:
Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions
Date
| dc.contributor.author | Czerwinski, A. | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Poyai, Amporn | |
| dc.contributor.author | Claeys, Cor | |
| dc.contributor.author | Ohyama, H. | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.date.accessioned | 2021-10-15T04:14:33Z | |
| dc.date.available | 2021-10-15T04:14:33Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7373 | |
| dc.source.beginpage | 278 | |
| dc.source.endpage | 287 | |
| dc.source.issue | 2 | |
| dc.source.journal | IEEE Trans. Nuclear Science | |
| dc.source.volume | 50 | |
| dc.title | Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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