Publication:

Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts

Date

2011
Presentation
Simple item page Full metadata Statistics
 
dc.contributor.authorVincent, Benjamin
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorWaldron, Niamh
dc.contributor.authorWang, W.-E.
dc.contributor.authorFranquet, Alexis
dc.contributor.authorDouhard, Bastien
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T21:18:32Z
dc.date.available2021-10-19T21:18:32Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20091
dc.source.conference7th International Conference on Silicium Epitaxy and Heterostructures - ICSI
dc.source.conferencedate29/08/2011
dc.source.conferencelocationLeuven Belgium
dc.title

Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts

dc.typeOral presentation
dspace.entity.typePublication
Files
Publication available in collections:
Presentations