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Superior NBTI reliability of SiGe channel pMOSFETs: replacement Gate, FinFETs, and impact of body bias
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Superior NBTI reliability of SiGe channel pMOSFETs: replacement Gate, FinFETs, and impact of body bias
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Date
2011
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Eneman, Geert
;
Roussel, Philippe
;
Grasser, T.
;
Mitard, Jerome
;
Ragnarsson, Lars-Ake
;
Cho, Moon Ju
;
Witters, Liesbeth
;
Chiarella, Thomas
;
Togo, Mitsuhiro
;
Wang, Wei-E
;
Hikavyy, Andriy
;
Loo, Roger
;
Horiguchi, Naoto
;
Groeseneken, Guido
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1843
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Acq. date: 2025-12-16
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1843
since deposited on 2021-10-19
2
last month
Acq. date: 2025-12-16
Citations