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Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions
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Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions
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Date
2009-06
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bargallo Gonzalez, Mireia
;
Simoen, Eddy
;
Vissouvanadin Soubaretty, Bertrand
;
Eneman, Geert
;
Verheyen, Peter
;
Loo, Roger
;
Claeys, Cor
;
Machkaoutsan, Vladimir
;
Tomasini, Pierre
;
Thomas, Shawn
Journal
Physica Status Solidi C
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1964
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-13
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Metrics
Views
1964
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-13
Citations