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Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions

Date

2009-06
Journal article
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dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVissouvanadin Soubaretty, Bertrand
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTomasini, Pierre
dc.contributor.authorThomas, Shawn
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T21:20:10Z
dc.date.available2021-10-17T21:20:10Z
dc.date.issued2009-06
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14948
dc.source.beginpage1901
dc.source.endpage1905
dc.source.issue8
dc.source.journalPhysica Status Solidi C
dc.source.volume6
dc.title

Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions

dc.typeJournal article
dspace.entity.typePublication
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