Publication:
Selective epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain or buried SiGe channels
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1850 since deposited on 2021-10-16
Acq. date: 2025-12-15
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Views
1850 since deposited on 2021-10-16
Acq. date: 2025-12-15
Citations