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Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential
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Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential
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Date
2011
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pawlak, Malgorzata
;
Kaczer, Ben
;
Wang, Wan-Chih
;
Kim, Min-Soo
;
Popovici, Mihaela Ioana
;
Swerts, Johan
;
Tomida, Kazuyuki
;
Opsomer, Karl
;
Schaekers, Marc
;
Vrancken, Christa
;
Govoreanu, Bogdan
;
Belmonte, Attilio
;
Demeurisse, Caroline
;
Debusschere, Ingrid
;
Altimime, Laith
;
Afanasiev, Valeri
;
Kittl, Jorge
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1936
since deposited on 2021-10-19
Acq. date: 2025-12-11
Citations
Metrics
Views
1936
since deposited on 2021-10-19
Acq. date: 2025-12-11
Citations