Publication:

Low frequency noise and fin width study of Si passivated Ge pFinFETs

Date

2016
Proceedings Paper
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dc.contributor.authorVinicius de Oliveira, Alberto
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGhedini Der Agopian, Paula
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T16:53:14Z
dc.date.available2021-10-23T16:53:14Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27553
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC Symposium I: Device Engineering and Technology
dc.source.conferencedate13/03/2016
dc.source.conferencelocationShanghai China
dc.title

Low frequency noise and fin width study of Si passivated Ge pFinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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