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Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
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Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
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Date
2021
Journal article
https://doi.org/10.1109/TDMR.2021.3080585
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Stockman, Arno
;
Canato, Eleonora
;
Meneghini, Matteo
;
Meneghesso, Gaudenzio
;
Moens, Peter
;
Bakeroot, Benoit
Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
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Acq. date: 2025-12-11
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Views
1816
since deposited on 2022-02-22
1
last month
1
last week
Acq. date: 2025-12-11
Citations