Publication:

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

Date

2021
Journal article
https://doi.org/10.1109/TDMR.2021.3080585
Simple item page Full metadata Statistics
 
dc.contributor.authorStockman, Arno
dc.contributor.authorCanato, Eleonora
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorMoens, Peter
dc.contributor.authorBakeroot, Benoit
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidextStockman, Arno::0000-0002-8992-4685
dc.contributor.orcidextMeneghini, Matteo::0000-0003-2421-505X
dc.contributor.orcidextMeneghesso, Gaudenzio::0000-0002-6715-4827
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2022-02-22T08:44:00Z
dc.date.available2022-02-22T08:44:00Z
dc.date.issued2021
dc.identifier.doi10.1109/TDMR.2021.3080585
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38974
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage169
dc.source.endpage175
dc.source.issue2
dc.source.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.source.numberofpages7
dc.source.volume21
dc.subject.keywordsSHIFT
dc.title

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles