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Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS

Date

2012
Proceedings Paper
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dc.contributor.authorCaymax, Matty
dc.contributor.authorMerckling, Clement
dc.contributor.authorWang, Gang
dc.contributor.authorOrzali, Tommaso
dc.contributor.authorGuo, Weiming
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDekoster, Johan
dc.contributor.authorWaldron, Niamh
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-20T10:12:47Z
dc.date.available2021-10-20T10:12:47Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20426
dc.identifier.urlIEEE Xplore
dc.source.conference24th Conference on Indium Phosphide and Related Materials - IPRM
dc.source.conferencedate27/08/2012
dc.source.conferencelocationSanta Barbara, CA USA
dc.title

Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS

dc.typeProceedings paper
dspace.entity.typePublication
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