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SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

Date

2008
Proceedings Paper
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dc.contributor.authorO'Connor, Robert
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-17T09:25:13Z
dc.date.available2021-10-17T09:25:13Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14238
dc.source.beginpage324
dc.source.conferenceIEEE International Reliability Physics Symposium Proceedings - IRPS
dc.source.conferencedate27/04/2008
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage329
dc.title

SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

dc.typeProceedings paper
dspace.entity.typePublication
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