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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vincent, Benjamin
;
Gencarelli, Federica
;
Bender, Hugo
;
Merckling, Clement
;
Douhard, Bastien
;
Petersen, D.H.
;
Hansen, O.
;
Henrichsen, H.H.
;
Meersschaut, Johan
;
Vandervorst, Wilfried
;
Heyns, Marc
;
Loo, Roger
;
Caymax, Matty
Journal
Applied Physics Letters
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1948
since deposited on 2021-10-19
2
last month
Acq. date: 2025-12-14
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Metrics
Views
1948
since deposited on 2021-10-19
2
last month
Acq. date: 2025-12-14
Citations