Publication:

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Date

2011
Journal article
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dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorBender, Hugo
dc.contributor.authorMerckling, Clement
dc.contributor.authorDouhard, Bastien
dc.contributor.authorPetersen, D.H.
dc.contributor.authorHansen, O.
dc.contributor.authorHenrichsen, H.H.
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T21:19:46Z
dc.date.available2021-10-19T21:19:46Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20093
dc.source.beginpage152103
dc.source.issue15
dc.source.journalApplied Physics Letters
dc.source.volume99
dc.title

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

dc.typeJournal article
dspace.entity.typePublication
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