Publication:

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors

Date

2023
Journal article
https://doi.org/10.1109/TNS.2023.3280432
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dc.contributor.authorGuo, Zixiang
dc.contributor.authorLi, Kan
dc.contributor.authorLi, Xun
dc.contributor.authorLuo, Xuyi
dc.contributor.authorZhang, En Xia
dc.contributor.authorReed, Robert A.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorMitard, Jerome
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2024-04-25T14:22:35Z
dc.date.available2024-01-08T17:19:11Z
dc.date.available2024-04-25T14:22:35Z
dc.date.issued2023
dc.description.wosFundingTextThis work was supported by the Air Force Center of Excellence in Radiation Effects under Award FA9550-22-1-0012.
dc.identifier.doi10.1109/TNS.2023.3280432
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43366
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2002
dc.source.endpage2007
dc.source.issue8
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages6
dc.source.volume70
dc.subject.keywordsELECTRICAL CHARACTERISTICS
dc.subject.keywordsRADIATION RESPONSE
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsDEGRADATION
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsTFTS
dc.title

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors

dc.typeJournal article
dspace.entity.typePublication
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