ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

dc.contributor.author	Acurio, Eliana
dc.contributor.author	Trojman, Lionel
dc.contributor.author	De Jaeger, Brice
dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Decoutere, Stefaan
dc.contributor.imecauthor	De Jaeger, Brice
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidext	Acurio, Eliana::0000-0002-9630-3342
dc.contributor.orcidimec	De Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2022-03-11T13:58:08Z
dc.date.available	2022-03-11T13:58:08Z
dc.date.issued	2021
dc.identifier.doi	10.1109/IRPS46558.2021.9405163
dc.identifier.eisbn	978-1-7281-6893-7
dc.identifier.issn	1541-7026
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/39417
dc.publisher	IEEE
dc.source.conference	IEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate	MAR 21-24, 2021
dc.source.conferencelocation	Virtual
dc.source.journal	na
dc.source.numberofpages	6
dc.subject.keywords	HEMTS
dc.subject.keywords	BREAKDOWN
dc.title	ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
dc.type	Proceedings paper
dspace.entity.type	Publication
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