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Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS
Publication:
Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS
Date
2002
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kottantharayil, Anil
;
Mahapatra, S.
;
Eisele, I.
Journal
IEEE Trans. Electron Devices
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1843
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1843
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations