Publication:
Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS
Date
| dc.contributor.author | Kottantharayil, Anil | |
| dc.contributor.author | Mahapatra, S. | |
| dc.contributor.author | Eisele, I. | |
| dc.date.accessioned | 2021-10-14T22:04:57Z | |
| dc.date.available | 2021-10-14T22:04:57Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/6496 | |
| dc.source.beginpage | 1283 | |
| dc.source.endpage | 1288 | |
| dc.source.issue | 7 | |
| dc.source.journal | IEEE Trans. Electron Devices | |
| dc.source.volume | 49 | |
| dc.title | Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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