TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

Norris, D.J.; Walther, T.; Cullis, A.G.; Myronov, M.; Dobbie, A.; Whall, T.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Lee, Willie; Meuris, Marc; Watling, J.; Asenov, A.

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TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

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2010

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Journal of Physics Conference Series

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1963 since deposited on 2021-10-18

Acq. date: 2026-06-18

TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

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