Publication:

TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

Date

2010
Journal article
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dc.contributor.authorNorris, D.J.
dc.contributor.authorWalther, T.
dc.contributor.authorCullis, A.G.
dc.contributor.authorMyronov, M.
dc.contributor.authorDobbie, A.
dc.contributor.authorWhall, T.
dc.contributor.authorParker, E.H.C.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLee, Willie
dc.contributor.authorMeuris, Marc
dc.contributor.authorWatling, J.
dc.contributor.authorAsenov, A.
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T19:40:50Z
dc.date.available2021-10-18T19:40:50Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn1742-6588
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17710
dc.source.beginpage12061
dc.source.issue1
dc.source.journalJournal of Physics Conference Series
dc.source.volume209
dc.title

TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

dc.typeJournal article
dspace.entity.typePublication
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