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Investigation of aggressively scaled HfALOx-based interpoly dielectric stacks for sub-45nm nonvolatile memory technologies

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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorWellekens, Dirk
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorBrunco, David
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorBlomme, Pieter
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-16T16:21:48Z
dc.date.available2021-10-16T16:21:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12219
dc.source.beginpage231
dc.source.conferenceProceedings 2nd International Conference on Memory technology and Design - ICMTD
dc.source.conferencedate7/05/2007
dc.source.conferencelocationGiens France
dc.source.endpage234
dc.title

Investigation of aggressively scaled HfALOx-based interpoly dielectric stacks for sub-45nm nonvolatile memory technologies

dc.typeProceedings paper
dspace.entity.typePublication
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