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Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs
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Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs
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Date
2005
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Verheyen, Peter
;
Eneman, Geert
;
Rooyackers, Rita
;
Loo, Roger
;
Eeckhout, Lieve
;
Rondas, Dirk
;
Leys, Frederik
;
Snow, Jim
;
Shamiryan, Denis
;
Demand, Marc
;
Hoffmann, Thomas Y.
;
Goodwin, Michael
;
Fujimoto, Hiromasa
;
Ravit, Claire
;
Lee, Byeong Chan
;
Caymax, Matty
;
De Meyer, Kristin
;
Absil, Philippe
;
Jurczak, Gosia
;
Biesemans, Serge
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1943
since deposited on 2021-10-16
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last month
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Acq. date: 2026-07-17
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Views
1943
since deposited on 2021-10-16
1
last month
1
last week
Acq. date: 2026-07-17
Citations