Publication:

Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs

Date

2005-12
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLoo, Roger
dc.contributor.authorEeckhout, Lieve
dc.contributor.authorRondas, Dirk
dc.contributor.authorLeys, Frederik
dc.contributor.authorSnow, Jim
dc.contributor.authorShamiryan, Denis
dc.contributor.authorDemand, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGoodwin, Michael
dc.contributor.authorFujimoto, Hiromasa
dc.contributor.authorRavit, Claire
dc.contributor.authorLee, Byeong Chan
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRondas, Dirk
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T06:50:33Z
dc.date.available2021-10-16T06:50:33Z
dc.date.issued2005-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11509
dc.source.beginpage907
dc.source.conferenceTechnical Digest International Electron Devices Meeting (IEDM)
dc.source.conferencedate5/12/2005
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage910
dc.title

Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions