Publication:

Work-function engineering for 32nm node pMOS devices: high-performance TaCNO-gated films

Date

2008
Journal article
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dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorIto, Satoru
dc.contributor.authorOikawa, Kota
dc.contributor.authorKubicek, Stefan
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVeloso, Anabela
dc.contributor.authorYu, HongYu
dc.contributor.authorSchram, Tom
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNakabayashi, Takashi
dc.contributor.authorIkeda, Atsushi
dc.contributor.authorNiwa, Masaaki
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.accessioned2021-10-17T09:32:58Z
dc.date.available2021-10-17T09:32:58Z
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14260
dc.source.beginpage1203
dc.source.endpage1205
dc.source.issue11
dc.source.journalIEEE Electron Device Letters
dc.source.volume29
dc.title

Work-function engineering for 32nm node pMOS devices: high-performance TaCNO-gated films

dc.typeJournal article
dspace.entity.typePublication
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