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Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

Date

2004
Proceedings Paper
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dc.contributor.authorTartarin, Jean-Guy
dc.contributor.authorSoubercaze-Pun, Geoffey
dc.contributor.authorRennane, Abdelali
dc.contributor.authorBary, Laurent
dc.contributor.authorPlana, Robert
dc.contributor.authorDe Jaeger, Jean C.
dc.contributor.authorGermain, Marianne
dc.contributor.authorDelage, Sylvain
dc.contributor.authorGraffeuil, Jacques
dc.date.accessioned2021-10-15T16:35:32Z
dc.date.available2021-10-15T16:35:32Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9667
dc.source.beginpage296
dc.source.conferenceNoise in Devices and Circuits II
dc.source.conferencedate26/05/2005
dc.source.conferencelocationMaspalomas Gran Canaria
dc.source.endpage306
dc.title

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

dc.typeProceedings paper
dspace.entity.typePublication
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