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Simulation of polychromatic effects in high NA EUV lithography

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dc.contributor.authorErdmann, Andreas
dc.contributor.authorMesilhy, Hazem
dc.contributor.authorEvanschitzky, Peter
dc.contributor.authorSaadeh, Qais
dc.contributor.authorSoltwisch, Victor
dc.contributor.authorBihr, Simon
dc.contributor.authorZimmermann, Joerg
dc.contributor.authorPhilipsen, Vicky
dc.contributor.imecauthorPhilipsen, Vicky
dc.contributor.orcidimecPhilipsen, Vicky::0000-0002-2959-432X
dc.date.accessioned2022-06-28T13:36:33Z
dc.date.available2022-05-22T02:19:15Z
dc.date.available2022-05-23T10:55:10Z
dc.date.available2022-06-28T13:36:33Z
dc.date.issued2021
dc.identifier.doi10.1117/12.2600931
dc.identifier.eisbn978-1-5106-4553-0
dc.identifier.isbn978-1-5106-4552-3
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39877
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.conferenceInternational Conference on Extreme Ultraviolet Lithography
dc.source.conferencedateSEP 27-OCT 01, 2021
dc.source.conferencelocationonline
dc.source.journalProceedings of SPIE
dc.source.numberofpages13
dc.source.volume11854
dc.subject.disciplineApplied physics
dc.subject.keywordsEUV lithography, high NA, computational lithography, EUV masks, EUV absorber materials, telecentricity, 3D mask e ects, polychromatic e ects, exposure bandwidth
dc.title

Simulation of polychromatic effects in high NA EUV lithography

dc.typeProceedings paper
dspace.entity.typePublication
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