Publication:

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

Date

1999
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorHamilton, B.
dc.contributor.authorFerhah, K.
dc.contributor.authorDavidson, J.
dc.contributor.authorDawson, P.
dc.contributor.authorWhittaker, E.
dc.contributor.authorCheng, T. S.
dc.contributor.authorFoxon, C. T.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorThrush, E. J.
dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K. J.
dc.date.accessioned2021-10-06T11:16:25Z
dc.date.available2021-10-06T11:16:25Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3487
dc.source.beginpage131
dc.source.conference3rd International Conference on Nitride Semiconductors - ICS3
dc.source.conferencedate04/07/1999
dc.source.conferencelocationMontpellier France
dc.title

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

dc.typeMeeting abstract
dspace.entity.typePublication
Files

Original bundle

Name:
3449.pdf
Size:
283.6 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions