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A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
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A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
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Date
1998
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Decoutere, Stefaan
;
Kuhn, Rudiger
;
Vleugels, Frank
;
Vancuyck, Geert
;
Caymax, Matty
;
Mohadjeri, Babak
;
Deferm, Ludo
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since deposited on 2021-09-30
Acq. date: 2025-12-15
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Downloads
4
since deposited on 2021-09-30
Acq. date: 2025-12-15
Views
2104
since deposited on 2021-09-30
Acq. date: 2025-12-15
Citations