A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications

dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Kuhn, Rudiger
dc.contributor.author	Vleugels, Frank
dc.contributor.author	Vancuyck, Geert
dc.contributor.author	Caymax, Matty
dc.contributor.author	Mohadjeri, Babak
dc.contributor.author	Deferm, Ludo
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.imecauthor	Vleugels, Frank
dc.contributor.imecauthor	Vancuyck, Geert
dc.contributor.imecauthor	Caymax, Matty
dc.contributor.imecauthor	Deferm, Ludo
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-09-30T11:47:06Z
dc.date.available	2021-09-30T11:47:06Z
dc.date.embargo	9999-12-31
dc.date.issued	1998
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2522
dc.source.beginpage	124
dc.source.conference	Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
dc.source.conferencedate	27/09/1998
dc.source.conferencelocation	Minneapolis, MN USA
dc.source.endpage	127
dc.title	A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
dc.type	Proceedings paper
dspace.entity.type	Publication
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