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Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Publication:
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Date
2017
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Tallarico, Andrea
;
Stoffels, Steve
;
Magnone, Paolo
;
Posthuma, Niels
;
Sangiorgi, Enrico
;
Decoutere, Stefaan
;
Fiegna, Claudio
Journal
IEEE Electron Device Letters
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2016
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations
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Views
2016
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations