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Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs

Date

2017
Journal article
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dc.contributor.authorTallarico, Andrea
dc.contributor.authorStoffels, Steve
dc.contributor.authorMagnone, Paolo
dc.contributor.authorPosthuma, Niels
dc.contributor.authorSangiorgi, Enrico
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorFiegna, Claudio
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-24T14:42:25Z
dc.date.available2021-10-24T14:42:25Z
dc.date.issued2017
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29548
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7752803/
dc.source.beginpage99
dc.source.endpage102
dc.source.issue1
dc.source.journalIEEE Electron Device Letters
dc.source.volume38
dc.title

Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs

dc.typeJournal article
dspace.entity.typePublication
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