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In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometry and comparison with other established techniques
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In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometry and comparison with other established techniques
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Date
2001
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Loo, Roger
;
Caymax, Matty
;
Blavier, G.
;
Kremer, Stephanie
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1856
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Acq. date: 2025-12-10
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Metrics
Views
1856
since deposited on 2021-10-14
4
last month
Acq. date: 2025-12-10
Citations