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In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometry and comparison with other established techniques

Date

2001
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorBlavier, G.
dc.contributor.authorKremer, Stephanie
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-14T17:16:45Z
dc.date.available2021-10-14T17:16:45Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5452
dc.source.conferenceIn-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; 1 June 2001; Edinburgh,
dc.source.conferencelocation
dc.title

In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometry and comparison with other established techniques

dc.typeProceedings paper
dspace.entity.typePublication
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