Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope

dc.contributor.author	Vanhellemont, Jan
dc.contributor.author	Romano, Albert
dc.contributor.author	Fedina, L.
dc.contributor.author	Van Landuyt, J.
dc.contributor.author	Aseev, A.
dc.date.accessioned	2021-09-29T13:22:20Z
dc.date.available	2021-09-29T13:22:20Z
dc.date.embargo	9999-12-31
dc.date.issued	1995
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/975
dc.source.beginpage	1194
dc.source.endpage	1202
dc.source.issue	11
dc.source.journal	Materials Science and Technology
dc.source.volume	11
dc.title	Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope
dc.type	Journal article
dspace.entity.type	Publication
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