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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
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Date
2018
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Stockman, Arno
;
Canato, E.
;
Tajalli, A.
;
Meneghini, M.
;
Meneghesso, G.
;
Zanoni, E.
;
Moens, P.
;
Bakeroot, Benoit
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1911
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Acq. date: 2025-12-10
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Views
1911
since deposited on 2021-10-26
3
last month
1
last week
Acq. date: 2025-12-10
Citations