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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Publication:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Date
2018
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Stockman, Arno
;
Canato, E.
;
Tajalli, A.
;
Meneghini, M.
;
Meneghesso, G.
;
Zanoni, E.
;
Moens, P.
;
Bakeroot, Benoit
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1906
since deposited on 2021-10-26
Acq. date: 2025-10-24
Citations
Metrics
Views
1906
since deposited on 2021-10-26
Acq. date: 2025-10-24
Citations