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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Date

2018
Proceedings Paper
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dc.contributor.authorStockman, Arno
dc.contributor.authorCanato, E.
dc.contributor.authorTajalli, A.
dc.contributor.authorMeneghini, M.
dc.contributor.authorMeneghesso, G.
dc.contributor.authorZanoni, E.
dc.contributor.authorMoens, P.
dc.contributor.authorBakeroot, Benoit
dc.contributor.imecauthorStockman, Arno
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2021-10-26T04:43:24Z
dc.date.available2021-10-26T04:43:24Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31859
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8353582/
dc.source.beginpage4B.5-1
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate11/03/2018
dc.source.conferencelocationBurlingame, CA USA
dc.source.endpage4B.5-4
dc.title

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

dc.typeProceedings paper
dspace.entity.typePublication
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