Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices

dc.contributor.author	Fantini, Andrea
dc.contributor.author	Goux, Ludovic
dc.contributor.author	Redolfi, Augusto
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Kar, Gouri Sankar
dc.contributor.author	Chen, Yangyin
dc.contributor.author	Jurczak, Gosia
dc.contributor.imecauthor	Fantini, Andrea
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.imecauthor	Redolfi, Augusto
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Kar, Gouri Sankar
dc.contributor.imecauthor	Chen, Yangyin
dc.contributor.imecauthor	Jurczak, Gosia
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.date.accessioned	2021-10-22T01:26:15Z
dc.date.available	2021-10-22T01:26:15Z
dc.date.embargo	9999-12-31
dc.date.issued	2014
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/23807
dc.identifier.url	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6894433&contentType=Conference+Publications
dc.source.beginpage	242
dc.source.conference	Symposium on VLSI Technology
dc.source.conferencedate	9/06/2014
dc.source.conferencelocation	Honolulu, HI USA
dc.source.endpage	243
dc.title	Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices
dc.type	Proceedings paper
dspace.entity.type	Publication
Files	Original bundle Name: 29213.pdf Size: 1.46 MB Format: Adobe Portable Document Format Download
Publication available in collections:	Conference contributions