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A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs

 
dc.contributor.authorZhou, Longda
dc.contributor.authorZhang, Zhaohao
dc.contributor.authorYang, Hong
dc.contributor.authorJi, Zhigang
dc.contributor.authorLiu, Qianqian
dc.contributor.authorZhang, Qingzhu
dc.contributor.authorSimoen, Eddy
dc.contributor.authorYin, Huaxiang
dc.contributor.authorLuo, Jun
dc.contributor.authorDu, Anyan
dc.contributor.authorZhao, Chao
dc.contributor.authorWang, Wenwu
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2022-02-07T10:59:45Z
dc.date.available2021-11-02T15:58:34Z
dc.date.available2022-02-07T10:59:45Z
dc.date.issued2021
dc.identifier.doi10.1109/IRPS46558.2021.9405105
dc.identifier.eisbn978-1-7281-6893-7
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37695
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 21-24, 2021
dc.source.conferencelocationVirtual
dc.source.journalna
dc.source.numberofpages7
dc.title

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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