Publication:

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

Date

2024

Journal article

https://doi.org/10.1109/LED.2024.3424563

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Author(s)

Tallarico, A. N.

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Bakeroot, Benoit

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Posthuma, Niels

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Decoutere, Stefaan

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Journal

IEEE ELECTRON DEVICE LETTERS

Metrics

523 since deposited on 2024-09-29

2last month

Acq. date: 2025-12-12