Publication:
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
| dc.contributor.author | Tallarico, A. N. | |
| dc.contributor.author | Millesimo, M. | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Posthuma, Niels | |
| dc.contributor.author | Cosnier, T. | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Sangiorgi, E. | |
| dc.contributor.author | Fiegna, C. | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Posthuma, Niels | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.date.accessioned | 2024-11-25T11:17:50Z | |
| dc.date.available | 2024-09-29T18:03:40Z | |
| dc.date.available | 2024-11-25T11:17:50Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work was supported in part by Intelligent Reliability 4.0 (iRel40). iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under Grant 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium,Finland, France, Italy, The Netherlands, Slovakia, Spain, Sweden, and Turkiye. | |
| dc.identifier.doi | 10.1109/LED.2024.3424563 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44584 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 1630 | |
| dc.source.endpage | 1633 | |
| dc.source.issue | 9 | |
| dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
| dc.source.numberofpages | 4 | |
| dc.source.volume | 45 | |
| dc.subject.keywords | RELIABILITY | |
| dc.subject.keywords | FREQUENCY | |
| dc.subject.keywords | BREAKDOWN | |
| dc.title | P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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