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Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors
Publication:
Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors
Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Severi, Simone
;
Pawlak, Bartek
;
Duffy, Ray
;
Augendre, Emmanuel
;
Henson, Kirklen
;
Lindsay, Richard
;
De Meyer, Kristin
Journal
IEEE Electron Device Letters
Abstract
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1970
since deposited on 2021-10-16
Acq. date: 2025-10-22
Citations
Metrics
Views
1970
since deposited on 2021-10-16
Acq. date: 2025-10-22
Citations